Friedrich Schiller University Jena (FSU)
The rise of micro/nanooptics and lab-on-chip devices demands the fabrication of three-dimensional structures with decent resolution. Here, we demonstrate the combination of grayscale electron beam lithography and direct forming methodology to fabricate antimony sulfide structures with free form for the first time. The refractive index of the electron beam patterned structure was calculated based on an optimization algorithm that is combined with genetic algorithm and transfer matrix method. By adopting electron irradiation with variable doses, 4-level Fresnel Zone Plates and metalens were produced and characterized. This method can be used for the fabrication of three-dimensional diffractive optical elements and metasurfaces in a single step manner.
Antimony trisulfide (Sb2S3Sb_{2}S_{3}), as an emerging material for integrated photonic devices, has attracted significant attention due to its high index, low loss, and phase-changing property in the optical regime. However, conventional lithography-based fabrication methods involve complex, time-consuming, multistep processes, rendering the photonic application of Sb2S3Sb_{2}S_{3} challenging. Here, we demonstrate that positive-tone fabrication of Sb2S3Sb_{2}S_{3} nanostructures using wet-etch femtosecond laser processing, a straightforward technique for the engraving of micro- and nanoscale structures, can address major fabrication challenges. The patterning mechanism and factors influencing resolution of Sb2S3Sb_{2}S_{3} thin film structures deposited on quartz (transmissive) and gold (reflective) substrates are experimentally investigated and supported by theoretical modelling. Using this approach, the smallest linewidth fabricated is measured at 178 nm. Consequently, multiple test patterns are demonstrated showing versatile functionalities. Functional Fresnel Zone Plates (FZPs) with varying focal length are fabricated and characterized. This study provides a significantly simplified approach for realizing Sb2S3Sb_{2}S_{3} based integrated photonic devices.
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