Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

@misc{aubry-fortuna2005electroneffectivemobility,
      title={Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation},
      author={V. Aubry-Fortuna and P. Dollfus and S. Galdin-Retailleau},
      year={2005},
      eprint={cond-mat/0411340},
      archivePrefix={arXiv},
      primaryClass={cond-mat.other},
      url={https://arxiv.org/abs/cond-mat/0411340},
}