The Berezinskii-Kosterlitz-Thouless (BKT) transition in ultra-thin NbN films is investigated in the presence of weak perpendicular magnetic fields. A jump in the phase stiffness at the BKT transition is detected up to 5 G, while the BKT features are smeared between 5 G and 50 G, disappearing altogether at 100 G, where conventional current-voltage behaviour is observed. Our findings demonstrate that weak magnetic fields, insignificant in bulk systems, deeply affect our ultra-thin system, promoting a crossover from Halperin-Nelson fluctuations to a BCS-like state with Ginzburg-Landau fluctuations, as the field increases. This behavior is related to field-induced free vortices that screen the vortex-antivortex interaction and smear the BKT transition.

The Berezinskii-Kosterlitz-Thouless (BKT) transition in ultra-thin NbN films is investigated in the presence of weak perpendicular magnetic fields. A jump in the phase stiffness at the BKT transition is detected up to 5 G, while the BKT features are smeared between 5 G and 50 G, disappearing altogether at 100 G, where conventional current-voltage behaviour is observed. Our findings demonstrate that weak magnetic fields, insignificant in bulk systems, deeply affect our ultra-thin system, promoting a crossover from Halperin-Nelson fluctuations to a BCS-like state with Ginzburg-Landau fluctuations, as the field increases. This behavior is related to field-induced free vortices that screen the vortex-antivortex interaction and smear the BKT transition.

We report the detailed study of structural micro-structuraland high magnetic field magneto transport propertiesof Bi2Se3single crystal. Bi2Se3 single crystal is grown through conventional solid-state reaction route via the self-flux method. Rietveld analysis on Powder X-ray Diffraction showed that the studied Bi2Se3 crystal is crystallized in single-phase without any impurity. The surface morphology analyzed through Scanning Electron Microscopy study which shows that as-grown single crystal exhibit layered type structure and the quantitative weight of the atomic constituents (Bi and Se) are found to be closeto the stoichiometric amount in energy-dispersive X-ray spectroscopy analysis. Low temperature (2.5K) magneto-resistance (MR) exhibited a v-type cusp around origin at lower magnetic field, which is the sign of weak anti-localization effect. Further, Bi2Se3 single crystal magneto conductivity data is fitted by well-known HLN equation in different magnetic field range of 2Tesla, 4Tesla and 6Tesla and the resultant found that the conduction mechanism of Bi2Se3 is dominated by WAL state.

We report the detailed study of structural micro-structuraland high magnetic field magneto transport propertiesof Bi2Se3single crystal. Bi2Se3 single crystal is grown through conventional solid-state reaction route via the self-flux method. Rietveld analysis on Powder X-ray Diffraction showed that the studied Bi2Se3 crystal is crystallized in single-phase without any impurity. The surface morphology analyzed through Scanning Electron Microscopy study which shows that as-grown single crystal exhibit layered type structure and the quantitative weight of the atomic constituents (Bi and Se) are found to be closeto the stoichiometric amount in energy-dispersive X-ray spectroscopy analysis. Low temperature (2.5K) magneto-resistance (MR) exhibited a v-type cusp around origin at lower magnetic field, which is the sign of weak anti-localization effect. Further, Bi2Se3 single crystal magneto conductivity data is fitted by well-known HLN equation in different magnetic field range of 2Tesla, 4Tesla and 6Tesla and the resultant found that the conduction mechanism of Bi2Se3 is dominated by WAL state.

We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Under illumination of white light and weak 405-nm near-ultraviolet laser light (30 mW), an unexpectedly large (200-300%) change in polarization and displacement current was observed. Light also changes the dc conduction current density by one to two orders of magnitude with a large switchable open circuit voltage (Voc ~ 2 V) and short circuit current (Jsc ~ 5x10-8 A). The samples show a photo-current ON/OFF ratio of order 6:1 under illumination of weak light.

We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.

Electrified Medium Scale Traveling Ionospheric Disturbances (EMSTIDs) is one of the prominent plasma structures that affect the propagation of high frequency radio waves. Overall, seasonal variation and propagation characteristics of the EMSTIDs are widely reported in literature. However, the effects of substorms on the formation and dissipation of the EMSTIDs are not well explored. In the present study, on a moderately geomagnetically active night of 26 October 2019 (Ap=24), the airglow imager over Hanle (32.7°N, 78.9°E; Mlat. ~24.1°N), India recorded the evolution and decay of an EMSTID in the O(1D) 630.0 nm airglow images in between 13.3 UT and 15.8 UT. In addition, during the same time, a steep rise and fall of the virtual base height of the ionospheric F-layer were also recorded by a nearby digisonde over New Delhi (28.70°N, 77.10°E; Mlat. ~20.2°N). The most important aspect of the event was the occurrence of the two consecutive substorms in between 13.3 UT and 15.8 UT. To the best of our knowledge, this is the first of its kind study where we report the role of interplanetary electric field (IEF) and substorm induced electric fields on the evolution and decay of the EMSTID. This study elicits effects of the externally imposed electric fields on the mid-latitude ionospheric plasma structures and provides insight into the complex coupling between auroral and low-mid latitude region.

Lead-free (K0.48Na0.48Li0.04)(Nb1-xTax)O3 (KNLNT-x) ceramics were synthesized to study the effects of Li and Ta substitution on phase transition behavior, microstructure, and ferroelectric, dielectric, and piezoelectric properties. X-ray diffraction and Raman spectroscopy show that compositions with x < 0.10 exhibit a single orthorhombic (Amm2) phase, while 0.10 <= x <= 0.20 show coexistence of orthorhombic and tetragonal (Amm2 + P4mm) phases. For x > 0.20, a single tetragonal (P4mm) phase is obtained. Microstructural analysis shows a dense ceramic with decreasing grain size as Ta concentration increases. Temperature-dependent dielectric studies reveal two transitions: orthorhombic-tetragonal (TO-T) and tetragonal-cubic (TC). Both transition temperatures decrease systematically with increasing Ta, and TO-T shifts below room temperature for x > 0.15. The composition KNLNT-0.20 exhibits the highest dielectric constant (Er = 556) and piezoelectric coefficient (d33 = 159 pC/N). The enhanced piezoelectric response is attributed to a morphotropic phase boundary rather than a shift of the polymorphic phase boundary temperature. A composition-temperature phase diagram was constructed based on XRD, Raman, and dielectric data.

The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow band of temperature above the transition temperature Tc, the coexistence of SFs-mediated positive MR and WL-led negative MR in different range of magnetic field, as well as a crossover from positive to negative MR with increasing temperature are reported here. The crossover temperature coincides with a characteristic temperature (Tmax) at which a resistance peak appears in the zero-field R(T). The resistance peak and the associated magnetoresistance anomalies are addressed by using the quantum corrections to the conductivity (QCC) theory. We show that WL can be accounted for the observed negative MR. By introducing individual coefficients to both SFs and WL contributions, the dominance of one over the other is monitored with respect to temperature. It is observed that just above the Tc, SF dominates and with increasing temperature, the contributions from the both become comparable and finally, at Tmax, WL takes over completely. The presented approach may be adopted to compare various quantum contributions in two-dimensional superconductors particularly in the regime where both SFs and WL are pronounced.

We report a new member of topological insulator (TI) family i.e., Mn$_2$Sb$_2$Te$_5$, which belongs to MnSb$_2$Te$_4$ family and is a sister compound of Mn$_2$Bi$_2$Te$_5$. An antiferromagnetic layer of (MnTe)$_2$ has been inserted between quintuple layers of Sb$_2$Te$_3$. The crystal structure and chemical composition of as grown Mn$_2$Sb$_2$Te$_5$ crystal is experimentally visualized by single crystal XRD (SCXRD) and field emission scanning electron microscopy (FESEM). The valence states of individual constituents i.e., Mn, Sb and Te are ascertained through X ray photo electron spectroscopy (XPS). Different vibrational modes of Mn$_2$Sb$_2$Te$_5$ are elucidated through Raman spectroscopy. Temperature-dependent resistivity of Mn$_2$Sb$_2$Te$_5$ resulted in metallic behaviour of the same with an up-turn at below around 20K. Further, the magneto-transport R(T) vs H of the same exhibited negative magneto-resistance (MR) at low temperatures below 20K and small positive at higher temperatures. The low Temperature -ve MR starts decreasing at higher fields. The magnetic moment as a function of temperature at 100Oe and 1kOe showed AFM like down turn cusps at around 20K and 10K. The isothermal magnetization (MH) showed AFM like loops with some embedded FM/PM domains at 5K and purely paramagnetic (PM) like at 100K. The studied Mn$_2$Sb$_2$Te$_5$ clearly exhibited the characteristics of a magnetic TI (MTI).

In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental composition. Rietveld refinement of XRD reveals that the end product is a majority hexagonal Pb7Bi3, with minor rhombohedral Bi. The electronic transport measurement shows metallic behavior with the Debye temperature of 108K and a superconductivity transition temperature (Tc) below 9K, which is the maximum to date for any reported Pb-Bi alloy, Pb or Bi at ambient pressure. Partial substitution of Bi at the Pb site may modify the free density of electronic states within the BCS model to attain the optimum Tc, which is higher by around 2K from the reported Tc of Pb. The superconductor phase diagram derived from magneto-transport measurements reveals that the synthesized alloy is a conventional superconductor with an upper critical field (Hc2) of 3.9 Tesla, which lies well within the Pauli paramagnetic limit. The magnetization measurements carried out following ZFC(Zero Field Cool) protocols infer that the synthesized alloy is a bulk superconductor below 9K. The isothermal M-H(Magnetization vs. Field) measurements performed below Tc establish it as a type-II superconductor. The specific heat capacity measurements show that the Pb-Bi alloy is a strongly coupled bulk superconductor below around 9K with possibly two superconducting gaps.

Fluorescence-guided surgery has emerged as a vital tool for tumour resection procedures. As well as intraoperative tumour visualisation, 5-ALA-induced PpIX provides an avenue for quantitative tumour identification based on ratiometric fluorescence measurement. To this end, fluorescence imaging and fibre-based probes have enabled more precise demarcation between the cancerous and healthy tissues. These sensing approaches, which rely on collecting the fluorescence light from the tumour resection site and its remote spectral sensing, introduce challenges associated with optical losses. In this work, we demonstrate the viability of tumour detection at the resection site using a miniature fluorescence measurement system. Unlike the current bulky systems, which necessitate remote measurement, we have adopted a millimetre-sized spectral sensor chip for quantitative fluorescence measurements. A reliable measurement at the resection site requires a stable optical window between the tissue and the optoelectronic system. This is achieved using an antifouling diamond window, which provides stable optical transparency. The system achieved a sensitivity of 92.3% and specificity of 98.3% in detecting a surrogate tumour at a resolution of 1 x 1 mm2. As well as addressing losses associated with collecting and coupling fluorescence light in the current remote sensing approaches, the small size of the system introduced in this work paves the way for its direct integration with the tumour resection tools with the aim of more accurate interoperative tumour identification.

The ability to form diamond electrodes on insulating polycrystalline diamond substrates using single-step laser patterning, and the use of the electrodes as a substrate that supports the adhesion and proliferation of human mesenchymal stem cells (hMSCs) is demonstrated. Laser induced graphitisation results in a conductive amorphous carbon surface, rich in oxygen and nitrogen terminations. This results in an electrode with a high specific capacitance of 182 uF/cm2, a wide water window of 3.25 V, and a low electrochemical impedance of 129 Ohms/cm2 at 1 kHz. The electrodes surface exhibited a good level of biocompatibility with hMSCs, supporting cell adhesion and proliferation. The cells cultured on the electrode displayed significant elongation and alignment along the direction of the laser patterned microgrooves. Because of its favourable electrochemical performance and biocompatibility, the laser-patterned diamond electrodes create a potential for a versatile platform in stem cell therapeutics.

This article reports the synthesis of a single crystalline gray Arsenic (As) via the Bismuth flux method. The X-ray Diffraction (XRD) pattern revealed the single phase of the grown crystal, which crystallized in the rhombohedral structure with the space group R3m. The sharp XRD peaks observed on mechanically exfoliated thin flakes of the same ensured high crystallinity of the same with growth direction along the c-axis. The resistivity measurements illustrated its metallic nature throughout, right from 300K down to 2K. The measured residual resistivity ratio of the sample is 180, which endorses the high metallic nature of the as-synthesized As single crystal. The transverse magnetic field-dependent resistivity (RH) measurements elucidated huge magneto-resistance (MR) at 2K and 14Tesla transverse magnetic fields. Also seen are the SDH oscillations, indicating the presence of topological surface states. The non-trivial band topology and edge states in As are confirmed by first principle calculations.

The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive switching (RS) performance, while hybrid materials like metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device utilizing zeolitic imidazolate framework (ZIF-8), a MOF material, as the resistive switching layer. The ZIF-8 film was synthesized via a simple solution process method at room temperature and subsequently characterized. The Al/ZIF-8/ITO device demonstrates bipolar resistive switching behaviour with an on/off resistance ratio of 100, stable retention up to 10000 seconds, and consistent performance across 60 cycles while exhibiting robust thermal stability from -20 C to 100 C. Low-frequency noise and impedance spectroscopy measurements suggest a filamentary switching mechanism. Additionally, the memory state can be tuned by adjusting the reset voltage, pointing to potential as multi-level memory. Potentiation and depression experiments further highlight the devices promise for neuromorphic applications. With high stability, tunability, and strong performance, the ZIF-8 based ReRAM shows great promise for advanced NVM and neuromorphic computing applications.

This article reports the synthesis of a single crystalline mixed topological insulator (TI) BiSbTe$_3$ and its detailed structural and magneto-transport properties. The single crystalline samples of BiSbTe$_3$ are grown by the melt-growth process and characterized by X-ray diffraction (XRD), Energy dispersive X-ray analysis (EDAX) and Raman spectroscopy. The single crystal XRD peaks dictated the growth direction along the c-axis. The Raman spectrum elucidated the characteristic peaks of the mixed topological insulator. The broadening of Raman peaks exhibited the formation of Te-Bi-Te and Te-Sb-Te bonds and associated vibrational modes. The single crystals are characterized by magneto-transport measurements down to 2 K and up to 14 Tesla transverse magnetic field. The residual resistance ratio (R200 K/R0 K) is found to be 3.64, which endorses the metallic nature of the synthesized crystal. The relative resistance turns out to be higher for the mixed TI than the pure TIs i.e., Bi$_2$Te$_3$ or Sb$_2$Te$_3$. The lower Debye temperature (82.64 K) of BiSbTe$_3$ connotes the presence of effective electron-phonon interaction at quite low temperatures in comparison to pure TI, which explains the observed suppression in magnetoresistance (MR) for the mixed TI. At 2 K, an MR of 150 percent is observed for BiSbTe$_3$, which is suppressed in contrast to the pure TIs i.e., Bi$_2$Te$_3$ or Sb$_2$Te$_3$. Though the MR% is suppressed significantly, its non-saturating linear behavior indicates the topological nature of the studied mixed TI. The modified Hikami-Larkin-Nagaoka (HLN) equation analysis of magneto-conductivity of mixed TI revealed that the conductivity has not only a surface states driven 2D component but also contributions from the bulk charge carriers and quantum scattering.

The metal to insulator (MIT) transition is accompanied with huge changes in physical responses by the control and tuning of experimental parameters like doping, pressure, chemical composition, and magnetic field. Here, we study the magnetic field driven MIT for two pnictides in their elemental form, namely Arsenic and Bismuth. At low temperatures, Bismuth shows an unusual behaviour of a re-entrant IMT at high fields in addition to a higher temperature MIT at smaller fields. However, Arsenic shows the commonly observed single MIT. The Shubnikov de Haas (SdH) oscillations are observed for both As and Bi below 10 K, elucidating their two-dimensional electron gas (2DEG) behaviour at low temperatures. Giant magneto-resistance of the order of 10^5 percent (MR percent) is observed for both crystals at 2 K and 14 Tesla transverse magnetic field. Based on a microscopic model, the microscopic processes underpinning the unusual features of a field-driven MIT and re-entrant IMT, along with the relevance of both excitonic and Bose metal correlations near these incipient instabilities, are qualitatively described in the framework of field-driven excitonic condensate and Das-Doniach preformed pair scenarios in one single picture.

Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to 5T show a nonsaturating low magneto-resistance percentage. V type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb2Te4 single crystal.

Superconductivity in topological materials has drawn a significant interest of the scientific community as these materials provide a hint of the existence of Majorana fermions conceived from the quantized thermal conductivity, a zero-biased conduction peak and the anomalous Josephson effect. In this review, we make a systematic study of recent advances in the field of topological superconductivity. The article comprises of both bulk systems as well as heterostructures. A brief description of Majorana fermions and their relationship with topological superconductors and heterostructures is also carried out. Also, this review consists of details of key experimental techniques to characterize candidates of topological superconductivity. Moreover, we summarize the potential material candidate that may demonstrate topological superconductivity. We also consider some intrinsic odd-parity superconductors, non-centrosymmetric, centrosymmetric superconductors, doped topological insulators, doped topological crystalline insulators and some other materials that are expected to show superconductivity along with topological non-trivial states in bulk from. The effect of pressure, emergence of superconductivity in topological materials and Muon Spin Rotation studies are also summarized in this article.

This article reports an easy route synthesis of bulk polycrystalline TiSe2. Phase purity and microstructure are determined through powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM) respectively. Vibrational modes of TiSe2 as being analyzed by Raman spectroscopy, show the occurrence of both Ag and Eg modes. Charge density wave (CDW) is observed in transport measurements of TiSe2 with hysteresis in cooling and warming measurements at around 180K. Further, studied TiSe2 showed negative magnetoresistance (MR) below the CDW and a small positive MR above the CDW.